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Archive for the ‘Nano Blog’ Category

December 25, 2015 – 2-D dichalcogenide MoS2 with PL QY of more than 95% is reported in Science

Tuesday, December 29th, 2015

Amani et al. recently reported near-perfect two-dimensional transition metal dichalcogenide, MoS2 with photoluminescence quantum yield of more than 95% by chemical treatment in a nonoxidizing organic superacid: bis(trifluoromethane) sulfonimide (TFSI), which eliminates defect-mediated nonradiative recombination.

To read more: Near-unity photoluminescence quantum yield in MoS2. Matin Amani, Der-Hsien Lien, Daisuke Kiriya, Jun Xiao, Angelica Azcatl, Jiyoung Noh, Surabhi R. Madhvapathy, Rafik Addou, Santosh KC, Madan Dubey, Kyeongjae Cho, Robert M. Wallace, Si-Chen Lee, Jr-Hau He, Joel W. Ager III, Xiang Zhang, Eli Yablonovitch, Ali Javey. Science 27 November 2015:  Vol. 350 no. 6264 pp. 1065-1068, DOI: 10.1126/science.aad2114

(Posted by Yonhua Tzeng)

 

December 21, 2015 – Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis Was Demonstrated for the First Time

Tuesday, December 29th, 2015

Negative Capacitance FET (NCFET) can be viewed as a FET with built-in voltage amplification. The first ALD ferroelectric HfZrO2 based negative-capacitance FinFET with gate length as small as 30 nm was reported in IEEE International Electron Devices Meeting (IEDM 2015) in Washington, DC USA. Small-signal voltage was amplified by 1.6X maximum at the internal gate with the sub-threshold swing improved from 87 to 55mV/decade. ION increased by >25% for the IOFF.

NC FINFET

To read more: IEDM15-621 Paper #22.6.2

Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis”

Kai-Shin Li(1), Pin-Guang Chen(2, 3), Tung-Yan Lai1, Chang-Hsien Lin(1), Cheng-Chih Cheng(3), Chun-Chi Chen(1), Yun-Jie Wei(1), Yun-Fang Hou(1), Ming-Han Liao(2), Min-Hung Lee(3), Min-Cheng Chen(1), Jia-Min Sheih(1), Wen-Kuan Yeh(1), Fu-Liang Yang(4), Sayeef Salahuddin(5), Chenming Hu(5)

(1) National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, Taiwan. (2) Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan. (3) Institute of Elecro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan. (4) Research Center for Applied Sci., Academia Sinica, Taipei,Taiwan. (5) Dept. of Electrical Eng. and Computer Science, University of California, Berkeley, USA; Tel: +886-3-572-6100 ext. 7706, Fax: +886-3-572-6109, Email: ksli@narlabs.org.tw

(Posted by Yonhua Tzeng)

 

December 14, 2015 – NIST Measured Nanoscale (16 nm) Features with Fractions of Light (450 nm)

Sunday, December 20th, 2015

By combining standard through-the-lens viewing with a technique called scatterfield imaging, the NIST team accurately measured patterned features on a silicon wafer that were 30 times smaller than the wavelength of light (450 nanometers) used to examine them. They reported that measurements of the etched lines—as thin as 16 nanometers wide—on the SEMATECH-fabricated wafer were accurate to one nanometer.

Nanophotonics 0 NIST

credit: NIST/Barnes
(Recommended by Ed Perkins, posted by Yonhua Tzeng)

To  read more:

  1. http://www.nist.gov/pml/div683/measuring_nanoscale_features_fractions_light_12-2-2015.cfm
  2. J. Qin, R.M. Silver, B.M. Barnes, H. Zhou, R.G. Dixson, and M.A.Henn,”Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization.” Light: Science & Applications. Article preview Nov. 5, 2015; e16038. To download: http://221.8.12.233/cms/accessory/files/AAP-lsa201638.pdf

 

June 20, 2015 – Nano Modeling and Simulation – IEEE NTC Technical Committee

Thursday, June 25th, 2015

The Modeling and Simulation technical committee focuses on topics associated with the formulation, development and use of theoretical models for the understanding and design of nanotechnological systems for engineering applications in a wide spectrum of human society. For this purpose, it addresses technical issues related to the development of numerical codes requiring basic software as well as large-scale computational resources such as density functional theory, tight binding methods, self-consistent Poisson-Schrödinger solver, Monte Carlo simulation, non-equilibrium green function techniques, molecular dynamics to name a few. Among the current and latest topics of investigation are modeling of nanoscale electronic and photonic devices and systems, advanced devices made of new low-dimensionality materials such as graphene and transition metal dichalcogenides, spintronic devices and bio-nanoelectronic devices for molecular manipulation and sensing.

nano pore

Schematic of a Graphene field effect membrane Transistor containing a nanopore for DNA sequencing (after

Anuj Girdhar, Chaitanya Sathe, Klaus Schulten and Jean-Pierre Leburton,  PNAS, 110 (42) pp.1648-1653 (2013))

(Submitted by Jean-Pierre Leburton, posted by Yonhua Tzeng)

 


June 10, 2015 – NIST’s ‘Nano-Raspberries’ Could Bear Fruit in Fuel Cells

Monday, June 15th, 2015

Researchers at the National Institute of Standards and Technology (NIST) have developed a fast, simple process for making platinum “nano-raspberries”—microscopic clusters of nanoscale particles of the precious metal. The berry-like shape is significant because it has a high surface area, which is helpful in the design of catalysts. Even better news for industrial chemists: the researchers figured out when and why the berry clusters clump into larger bunches of “nano-grapes.”

NIST Platinum Resterberry

Read more

 

May 9, 2015 – NIST-led Research Group Creates First Whispering Gallery for Graphene Electrons

Friday, May 15th, 2015

Yue Zhao et al., an international team of scientists at the U.S. Commerce Department’s National Institute of Standards and Technology (NIST), demonstrated nanoscale whispering gallery electron resonance in graphene by using the probe voltage of a scanning tunneling microscope to create a circular pn junction in nanoscale area like a circular wall of mirrors to the electrons and similar to what happens to acoustic wave in the famous whispering gallery of St. Paul’s Cathedral.

“An electron that hits the step head-on can tunnel straight through it,” said NIST researcher Nikolai Zhitenev. “But if electrons hit it at an angle, their waves can be reflected and travel along the sides of the curved walls of the barrier until they began to interfere with one another, creating a nanoscale electronic whispering gallery mode.”

The potential of graphene-based quantum electronic resonators and lenses is believed to be huge.

Read the original press release and article: Center for Nanoscale Science and Technology/ NIST ; *Y. Zhao, J. Wyrick, F. Natterer, J. Rodriguez-Nieva, C. Lewandowski, K. Watanabe, T. Taniguchi, L. Levitov, N. Zhitenev, and J. Stroscio. Creating and probing electron whispering-gallery modes in graphene. Science. 8 May 2015: Vol. 348, no. 6235, pp. 672-675. DOI: 10.1126/science.aaa7469.

15CNST007_graphene_whispering_gallery_LR

credit: Jon Wyrick, CNST/NIST

(Recommended by Ed Perkins, posted by Yonhua Tzeng)

 

May 8, 2015 – Pathway to the Piezoelectronic Transduction Logic Device

Friday, May 8th, 2015

P. M. Solomon et al. proposed a piezoelectronic transistor (PET) not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator−metal transition, thereby achieving multi-gigahertz switching speeds, as predicted by modeling, at low power. The team demonstrated a stress-based transduction principle. Read the original article: Nano Lett. 2015, 15, 2391−2395.

piezoelectronics

(Posted by Yonhua Tzeng. Adapted with permission from Nano Lett. 2015, 15, 2391−2395, DOI: 10.1021/nl5046796 Copyright © 2015 American Chemical Society.)

May 8, 2015 – Flexible CMOS-like Logic Circuits Made of N-type Polymer Sorted Single-Wall Carbon Nanotube

Friday, May 8th, 2015

Huiliang Wang et al. demonstrated flexible CMOS-like logic circuits made of ambipolar single-wall carbon nanotube transistors fabricated without needing for doping processes using high-mobility electron-accepting (n-type) polymer sorted semiconducting SWCNT. Read the original article: Huiliang Wang et al., Adv. Funct. Mater. 2015, 25, 1837–1844. DOI: 10.1002/adfm.201404126  (Posted by Yonhua Tzeng)

n-type polymer doped SWCNT for CMOS-like logic circuit

May 7, 2015 – Majority logic gate for 3D nano-scale magnetic computing

Thursday, May 7th, 2015

Irina Eichwald et al. demonstrated the potential of 3D high integration density digital computing based on physically field interacting nanometer-scaled magnets with a bistable magnetization state, representing the Boolean logic states ‘0’ and ‘1’, arranged in a 3D manner. Read the original article: Irina Eichwald et al 2014 Nanotechnology 25 335202 doi:10.1088/0957-4484/25/33/335202

3D NML computing - Nanotechnology 2014

Schematic of a 3D NML logic system. Logic computing is performed by 3D NAND/NOR gates. Information between functional layers is transmitted by magnetic vias, enabling magnetic signal crossing and computing on a multi-level regime. Electrical in and output sensors enable us to transform magnetic information into the electrical domain and vice versa.

(Posted by Yonhua Tzeng)

May 4, 2015 – Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Monday, May 4th, 2015

Wafer-level integration of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) of >1M CNTFETs/cmwith the resonance frequency tunable in situ by both a lateral gate and the back gate has been demonstrated by Ji Cao et al. offering promise in radio frequency signal processing and ultrasensitive sensing.

resonant cnt transistors - ACS Nano 2015

Adapted with permission from ACS Nano, 2015, 9 (3), pp 2836–2842 DOI: 10.1021/nn506817y. Copyright © 2015 American Chemical Society.  (Posted by Yonhua Tzeng)