IEEE Nanotechnology Council
Advancing Nanotech for Humanity

May 4, 2015 – Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Wafer-level integration of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) of >1M CNTFETs/cmwith the resonance frequency tunable in situ by both a lateral gate and the back gate has been demonstrated by Ji Cao et al. offering promise in radio frequency signal processing and ultrasensitive sensing.

resonant cnt transistors - ACS Nano 2015

Adapted with permission from ACS Nano, 2015, 9 (3), pp 2836–2842 DOI: 10.1021/nn506817y. Copyright © 2015 American Chemical Society.  (Posted by Yonhua Tzeng)

Comments are closed.