May 4, 2015 – Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Wafer-level integration of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) of >1M CNTFETs/cm² with the resonance frequency tunable in situ by both a lateral gate and the back gate has been demonstrated by Ji Cao et al. offering promise in radio frequency signal processing and ultrasensitive sensing.

Adapted with permission from ACS Nano, 2015, 9 (3), pp 2836–2842 DOI: 10.1021/nn506817y. Copyright © 2015 American Chemical Society.  (Posted by Yonhua Tzeng)

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