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Date: Wednesday, November 13
Time: 17:00 Vienna (Austria) time
Speaker: Dr. Zlatan Stanojevic, CTO, Global TCAD Solutions
Organizer: Josef Weinbub, TC 10 Co-Chair, weinbub@iue.tuwien.ac.at
Title: Advanced Nanoscale MOSFET Simulation with the Subband Boltzmann Transport Equation
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Abstract:
Join us for an in-depth exploration of Nanoscale MOSFET Simulation using the Subband Boltzmann Transport Equation (SBTE), powered by the advanced GTS Nano Device Simulator (NDS). This webinar will guide you through the fundamentals of simulating MOSFETs at the nanoscale, focusing on device performance and transport phenomena. We will demonstrate live simulations and cover not only traditional silicon-based MOSFETs but also cutting-edge 1D and 2D materials like transition metal dichalcogenides (TMDs), graphene, and carbon nanotubes. Attendees will gain hands-on insights into modeling these materials and learn how to leverage the SBTE for advanced device design.
Bio:
Zlatan Stanojević holds MSc and PhD degrees in Microelectronics from the Vienna University of Technology, completed in 2009 and 2016, respectively. An expert in TCAD and advanced device simulation, he co-developed the Subband Boltzmann Transport Equation (SBTE) simulation method. As the Chief Technology Officer at Global TCAD Solutions, he oversees the company’s R&D efforts. A Senior IEEE member, he is actively engaged in the electron devices and nanotechnology communities, contributing to major journals and conferences such as IEDM, ESSDERC, SISPAD, or NMDC, on some of which he has also served as reviewer and technical committee member.