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Date: June 27, 2023
Topic: Atomistic TCAD Simulations
Speaker: Philippe Blaise, Atomistic Senior Application Engineer, TCAD Division, Silvaco, Inc.
Time: 8:00 PDT, 17:00 CEST, 00:00 JST
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Abstract:
For designing the most advanced technological nodes, quantum effects become hard to approximate. This leads to the failure of using conventional TCAD tools that are essentially based on empirical laws. Therefore, engineers need new simulation tools at the 5 nm node and below that combine a more fundamental formalism with affordable performances and ease of use. During this webinar, we will briefly describe what is behind the non-equilibrium Green’s function (NEGF) formalism with simplified arguments. We will show how simulating nano-devices becomes easy, even without full academic knowledge of the NEGF theory. The quantum complexity is hidden inside the simulation tool “VictoryAtomistic” which benefits from years of development at the highest level. We will show two test cases: a silicon Nanowire Field-Effect Transistor (NWFET) and a 2D-TMD Tunneling FET (TFET) made of a layer of MoS2. Thanks to a combination of state-of-the-art band structure calculations with the NEGF, predictive, versatile, and fast simulations of these devices become accessible with an environment that provides a smooth transition for TCAD users.
Biography:
Dr. Philippe Blaise has been a senior application engineer in atomistic simulation at Silvaco’s TCAD Division for four years. Prior to joining Silvaco, Dr. Blaise was a senior engineer specialized in atomistic simulation of new memory devices and transistors at CEA/LETI for 15 years. He is a former member of the IEEE IEDM Modelling and Simulation Committee. He is co-author of more than 60 papers in peer-review journals in the field and 30 contributions to conferences and workshops, plus 5 patents and one book chapter. Dr. Blaise holds a Master’s degree in applied mathematics and a Ph.D. in solid states physics from the Université Grenoble Alpes, France.
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