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At the beginning of each year, T-NANO selects a paper that appeared in the Transactions during the previous calendar year for its Best Paper Award. Candidate papers are nominated by members of the Editorial Board. Evaluation is done by members of the Senior Editors Panel, with criteria including technical merit, originality, potential impact on the field, clarity of presentation, and practical significance for applications.
The winner of the 2017 TNANO Best Paper Award is
Negative Capacitance for Boosting Tunnel FET performance
by Masaharu Kobayashi; Kyungmin Jang; Nozomu Ueyama; and Toshiro Hiramoto, Institute of Industrial Science, University of Tokyo, Tokyo, Japan
To read the paper go to https://ieeexplore.ieee.org/document/7833118/
Profs. Toshiro Hiramoto and Masaharu Kobayashi of The University of Tokyo accepting the TNANO 2017 Best Paper Award from NTC President Tzeng (right) at IEEE-NANO 2018 banquet.