IEEE Nanotechnology Council
Advancing Nanotech for Humanity
IEEE

April 23, 2015 – All-electric all-semiconductor spin field-effect transistors

Pojen Chuang et al. of National Cheng Kung University in Tainan, Taiwan and his co-workers used two quantum point contacts as spin injectors and detectors to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical all-semiconductor spin field-effect transistor which is compatible with large-scale integration and promising for future spintronics based information processing.  Read the original article: Pojen Chuang, Sheng-Chin Ho, L. W. Smith, F. Sfigakis, M. Pepper, Chin-Hung Chen , Ju-Chun Fan , J. P. Griffiths, I. Farrer, H. E. Beere, G. A. C. Jones, D. A. Ritchie and Tse-Ming Chen. All-electric all-semiconductor spin field-effect transistors. Nature Nanotechnology DOI: 10.1038/NNANO.2014.296  (Posted by Y. Tzeng)

nnano.2014.296-f1 - All electric all-semiconductor spin FET

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