Category: Nano News

Get the latest updates from Nano News – featuring council announcements, member highlights, and key developments across the global nanotechnology community.

  • May 8, 2015 – Flexible CMOS-like Logic Circuits Made of N-type Polymer Sorted Single-Wall Carbon Nanotube

    Huiliang Wang et al. demonstrated flexible CMOS-like logic circuits made of ambipolar single-wall carbon nanotube transistors fabricated without needing for doping processes using high-mobility electron-accepting (n-type) polymer sorted semiconducting SWCNT. Read the original article: Huiliang Wang et al., Adv. Funct. Mater. 2015, 25, 1837–1844. DOI: 10.1002/adfm.201404126  (Posted by Yonhua Tzeng)

    Published On: May 8, 2015Categories: NANO Blog, Nano News0.3 min read

  • May 7, 2015 – Majority logic gate for 3D nano-scale magnetic computing

    Irina Eichwald et al. demonstrated the potential of 3D high integration density digital computing based on physically field interacting nanometer-scaled magnets with a bistable magnetization state, representing the Boolean logic states ‘0’ and ‘1’, arranged in a 3D manner. Read the original article: Irina Eichwald et al 2014 Nanotechnology 25 335202 doi:10.1088/0957-4484/25/33/335202 Schematic of a 3D NML logic system. Logic computing is performed by 3D NAND/NOR gates. Information between functional layers is transmitted by magnetic vias, enabling magnetic signal [...]

    Published On: May 7, 2015Categories: NANO Blog, Nano News0.6 min read

  • May 4, 2015 – Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

    Wafer-level integration of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) of >1M CNTFETs/cm2 with the resonance frequency tunable in situ by both a lateral gate and the back gate has been demonstrated by Ji Cao et al. offering promise in radio frequency signal processing and ultrasensitive sensing. Adapted with permission from ACS Nano, 2015, 9 (3), pp 2836–2842 DOI: 10.1021/nn506817y. Copyright © 2015 American Chemical Society.  (Posted by Yonhua Tzeng)

    Published On: May 4, 2015Categories: NANO Blog, Nano News0.4 min read

  • May 1, 2015 – Fluorinated Epitaxial Graphene Diffusion Barrier on Germanium Enables Ge-MOSFET without Unstable Germanium Oxide

    Zheng et al. demonstrated Ge-MOSFET with negligible C−V hysteresis, extremely low leakage, and superior equivalent oxide thickness by the aid of a fluorinated epitaxial graphene on Ge as an oxygen diffusion barrier to successfully prevent the formation of unstable germanium oxide between the Ge channel and the HfO2 gate oxide.  Read the original article: Xiaohu Zheng et al., Adv. Funct. Mater. 2015, 25, 1805–1813 (Posted by Yonhua Tzeng) a) Schematic diagram showing [...]

    Published On: May 1, 2015Categories: NANO Blog, Nano News0.9 min read

  • April 29, 2015 – Subwavelength-scale Photoreduced Graphene Oxides Enable Holographic Images

    Xiangping Li et al. demonstrated write-once holograms for wide-angle and full-colour three-dimensional images using subwavelength-scale pulsed femtosecond laser reduction of graphene oxide to enable multilevel optical index modulation and restoration of  vectorial wavefronts of polarization discernible images through the vectorial diffraction of a reconstruction beam. Read the original article: Li et al., Nature Communication  (2015) (Posted by Y. Tzeng)

    Published On: April 29, 2015Categories: NANO Blog, Nano News0.3 min read

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